The following parameters were renamed or changed in the opb_emc_v2_00_a to match the memory devices data sheet better and make it easier to use. These parameters were named differently and no longer exist in the older version of this core (that is, opb_emc_v1_10_b with EDK 6.3, SP1).
The following parameters were named/modified in opb_em_v2_00_a:
PARAMETER C_TCEDV_PS_MEM_0 = 15000, DT = INTEGER
PARAMETER C_TAVDV_PS_MEM_0 = 15000, DT = INTEGER
PARAMETER C_THZCE_PS_MEM_0 = 7000, DT = INTEGER
PARAMETER C_THZOE_PS_MEM_0 = 7000, DT = INTEGER
PARAMETER C_TWC_PS_MEM_0 = 15000, DT = INTEGER
PARAMETER C_TWP_PS_MEM_0 = 12000, DT = INTEGER
PARAMETER C_TLZWE_PS_MEM_0 = 0, DT = INTEGER
The above parameters were name or modified in opb_emc_v1_10_b with EDK 6.3, SP1.
PARAMETER C_READ_ADDR_TO_OUT_SLOW_PS_0 = 110000
PARAMETER C_WRITE_MIN_PULSE_WIDTH_PS_0 = 70000
PARAMETER C_READ_ADDR_TO_OUT_FAST_PS_0 = 110000
PARAMETER C_WRITE_ADDR_TO_OUT_FAST_PS_0 = 70000
PARAMETER C_READ_RECOVERY_BEFORE_WRITE_PS_0 = 150000
PARAMETER C_WRITE_RECOVERY_BEFORE_READ_PS_0 = 120000
To Rev Up the core to opb_emc_v2_00_a, the above parameters require that they be updated. Please refer to opb_emc_v2_00_a Data Sheet for parameters' descriptions.